This paper deals with the performance of both gate and drain control coefficients to analyze the behavior of carbon nanotube field effect transistors (CNTFETs) under ballistic conditions and based on the change of different parameter value, such as oxide thickness of structure and temperature variation. A thorough study of both gate and drain control coefficient effects on the performance of CNTFETs has been conducted under different temperature and oxide layers and the output of the device has been analyzed through different parameters. Higher values of control coefficient help to attain larger transconductance by the increasing temperatures. For a fixed value of control coefficient, 4[Formula: see text]nm thickness of oxide has a transconductance of [Formula: see text] 4.5 [Formula: see text] 10[Formula: see text] S/m. Smaller oxide layer thickness has higher slope of increment in transconductance value. ON-state current to leakage current ratio shows a steady state response toward increment of gate control coefficient. Also, increment of oxide thickness has an adverse effect on current ratio, while a linear decay of current ratio is observed with the increased value of drain controlled one. Drain-induced battery lowering (DIBL) effect decreases with the value of gate control one and increases with the drain control coefficient. In this way, the optimum value for both the control coefficients has to be considered in order to perform well.
This paper deals with different parametric effects to analyses the behaviour of carbon nanotube field effect transistors (CNTFETs) under non-ballistic conditions and based on the changes of gate dielectric constant the performance of CNTFETs has been explored in detail as functions of different parameters such as temperature and gate oxide thickness. A thorough study of the combined non-ballistic effect on the performance of CNTFETs has been conducted with different principle characteristics of CNTFETs and the output of the device has been analyzed. The on/off current ratio decreases with the decreasing value of the gate insulator thickness under nonballistic regime. With higher thickness of oxide and dielectric constants, quantum capacitance of CNTFET decreases despite of non-ballistic movements. This effect continues with the total capacitance of the device. The decrement of the ratio of transconductance to drain current with respect to temperature indicates the increase in gate capacitance with high dielectric constants value and oxide thickness. Under higher value of temperature and dielectric constants, current ratio degrades considerably.
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