Lead-free piezoelectric (K,Na)(Nb,Ta)O 3 thin films were prepared by chemical solution deposition. Perovskite single-phase (K 0:5 -Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 and Mn-doped (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films were successfully fabricated at 600 C on Pt/TiO x /SiO 2 /Si substrates by controlling the excess amounts of K and Na, and Mn by doping. The (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films showed poor ferroelectric polarizations due to the insufficient insulating resistance at room temperature. The leakage current density of the (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 films, especially in the high-applied-field region, was markedly reduced by doping with a small amount of Mn. Also, the ferroelectric properties of the (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films were markedly improved by Mn doping. 0.5 and 1.0 mol % Mn-doped (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films exhibited well-shaped ferroelectric polarization-electric field (P-E ) hysteresis loops at room temperature. The remanent polarization (P r ) and coercive field (E c ) values of the 0.5 and 1.0 mol % Mn-doped (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films at 1 kHz were approximately 14 and 21 mC/cm 2 , and 111 and 86 kV/cm, respectively. Furthermore, these films showed a typical field-induced butterfly loop, and the estimated effective d 33 values were 58 pm/V for the 0.5 mol % Mn-doped (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films and 41 pm/V for the 1.0 mol % Mn-doped (K 0:5 Na 0:5 )(Nb 0:8 Ta 0:2 )O 3 thin films. #
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