No abstract

Endothelial cell (EC) plasticity in pathological settings has recently been recognized as a driver of disease progression. Endothelial-to-mesenchymal transition (EndMT), in which ECs acquire mesenchymal properties, has been described for a wide range of pathologies, including cancer. However, the mechanism regulating EndMT in the tumor microenvironment and the contribution of EndMT in tumor progression are not fully understood. Here, we found that combined knockdown of two ETS family transcription factors, ERG and FLI1, induces EndMT coupled with dynamic epigenetic changes in ECs. Genome-wide analyses revealed that ERG and FLI1 are critical transcriptional activators for EC-specific genes, among which microRNA-126 partially contributes to blocking the induction of EndMT. Moreover, we demonstrated that ERG and FLI1 expression is downregulated in ECs within tumors by soluble factors enriched in the tumor microenvironment. These data provide new insight into the mechanism of EndMT, functions of ERG and FLI1 in ECs, and EC behavior in pathological conditions.

Molecular fluorophores of type A–π–D–π–A (D=donor, A=acceptor) demonstrate solid‐state emission in the red to near‐infrared region with high efficiency. The emission color can be tuned through the substituents on the diarylamino and cyanophenyl moieties. The electroluminescence performance of the designed fluorophore confirms its potential as an emitter for use in organic light‐emitting devices.

Terahertz (THz) electromagnetic spectrum draws wide attention for nondestructive and/or biocompatible sensing. In order to be widely applicable to the THz sensing, it is of prime importance to develop THz sensors that can be operated at room temperature and have high sensitivity and fast operation speed. However, conventional room-temperature THz thermal sensors fall short of expectations in these characteristics required in various applications of THz sensing, including THz cameras. Utilizing a thermomechanical transduction scheme, we have developed an uncooled, sensitive, and fast THz bolometer by using a doubly clamped GaAs microelectromechanical system (MEMS) beam resonator as a sensitive thermistor. Owing to its ultrahigh temperature sensitivity (the noise equivalent temperature difference of ∼1 μK/√Hz), the present bolometer achieves not only high sensitivity but also an operation bandwidth of several kHz, which is more than 100 times faster than other uncooled THz thermal sensors. The obtained electrical noise equivalent power is as low as ∼90 pW/√Hz, which is close to the limit set by the thermal fluctuation noise. The MEMS bolometers are fabricated by the standard semiconductor fabrication processes and are well suited for making detector arrays for realizing THz cameras.