A series of phenylcarbinols have been evaluated as components of chemically amplified resists used for KrF excimer laser lithography. The character of the carbon atom to which the hydroxyl group is bonded to determines the insolubilization reactions, leading to differences in sensitivity. Resists using tertiary phenylcarbinol, which converts into polymeric compounds, exhibits the highest sensitivity while the resists using primary phenylcarbinol, which cross-links the phenolic resin, has the lowest sensitivity. Properties, such as sensitivity and chemistry, of the resist containing the secondary phenylcarbinol groups lie between those of the primary and tertiary phenylcarbinol containing resists.
We use the method of thermal QCD sum rules to investigate the effects of temperature on the neutron electric dipole moment d n induced by the vacuum θ-angle. Then, we analyse and discuss the thermal behaviour of the ratio | d n θ | in connection with the restoration of the CP-invariance at finite temperature.
This paper investigates the resolution limit of KrF excimer laser lithography using phase-shifting mask (PSM)
technology by simulation and experiment. An improved phase-shifting mask structure combined with a newly
developed crosslinking type negative-tone resist on a reflection-suppressed trilayer resist makes it possible to
delineate minimum pattern size of 0.13 µm with sufficient depth of focus, using a high-NA lens system under
high coherent light. These results show that KrF excimer laser lithography applying PSM technology is a good
candidate for gigabit-level ULSI fabrication by lithography.
We propose a new pattern delineation technology where composite phase-shifting masks are used for KrF exposure. Half-tone phase-shifting masks (HTPSMs) are widely used for delineating 0.20-to 0.25-pm hole patterns. However, the process latitude of the pattern transfer for 0. 1 8-tim hole patterns or smaller is very tight, and it is quite difficult to delineate such small patterns using conventional HTPSMs with KrF exposure for mass production. However, by using a newly developed composite phase-shifting mask, we have been able to simultaneously delineate 0. 1 8-pm or smaller isolated hole patterns and dense hole patterns with sufficient process latitude. Two types of phase-shifting technology were integrated in a single phase-shifting mask that had both a Cr region and a halftone region. For the delineation of isolated hole patterns, eight outrigger sub-slots were octagonally arrayed around each isolated hole pattern (OO-HTPSM: octagonal outrigger HTPSM). For the delineation of dense hole patterns, an alternating phase assignment was applied (alternating PSM). We found through both simulation and experiment that the focus latitude could be expanded by the use of this composite phase-shifting mask.
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