Although regulators of the Wnt/planar cell polarity (PCP) pathway are widely expressed in vertebrate nervous systems, their roles at synapses are unknown. Here, we show that Vangl2 is a postsynaptic factor crucial for synaptogenesis and that it coprecipitates with N-cadherin and PSD-95 from synapse-rich brain extracts. Vangl2 directly binds N-cadherin and enhances its internalization in a Rab5-dependent manner. This physical and functional interaction is suppressed by β-catenin, which binds the same intracellular region of N-cadherin as Vangl2. In hippocampal neurons expressing reduced Vangl2 levels, dendritic spine formation as well as synaptic marker clustering is significantly impaired. Furthermore, Prickle2, another postsynaptic PCP component, inhibits the N-cadherin-Vangl2 interaction and is required for normal spine formation. These results demonstrate direct control of classic cadherin by PCP factors; this control may play a central role in the precise formation and maturation of cell-cell adhesions at the synapse.
In situ electrical measurements during nanoindentation of Czochralski grown p-type crystalline silicon ͑100͒ have been performed using a conducting diamond Berkovich indenter tip. Through-tip current monitoring with a sensitivity of ϳ10 pA and extraction of current-voltage curves at various points on the complete load-unload cycle have been used to track the phase transformations of silicon during the loading and unloading cycle. Postindent current-voltage curves prove to be extremely sensitive to phase changes during indentation, as well as to the final phase composition within the indented volume. For example, differences in the final structure are detected by current-voltage measurements even in an unloading regime in which only amorphous silicon is expected to form. The electrical measurements are interpreted with the aid of previously reported transmission electron microscopy and Raman microspectroscopy measurements.
Cyclic indentation of crystalline silicon exhibits interesting pressure-induced phase-transformation behavior whereby sequential changes in the phase composition ultimately lead to a catastrophic ͑"pop-out"͒ event during subsequent cycles and complete transformation to high pressure Si-III and Si-XII phases. This study combines in situ electrical measurements with cyclic loading to monitor such phase-transformation behavior. We find that, if a pop-out is not observed on the unloading curve, the end phase is predominantly amorphous but a small and increasing volume of Si-III/Si-XII results with each cycle. At a critical Si-III/Si-XII volume, pop-out can occur on a subsequent cycle, whereafter Si-III/Si-XII dominates the indent volume.
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