We have investigated the defects introduced by Ar ion bombardment on cleaved MoS2 surface by scanning tunneling microscopy (STM). The resultant defects have been observed at room temperature as dark regions typically 6–8 nm in diameter and their contrast is found to depend on the sample bias voltage (SB). The high-temperature STM observations at 600°C and 800°C show a reduction of the diameter to 2–4 nm. Based on these experimental results it is concluded that the S atom complex produced at the defect site is partially negatively ionized and a depletion region of conduction electrons is produced around it. The observed lateral extent of the depletion region is in good agreement with that calculated from the repulsive Coulomb potential due to the negatively charged complex. The calculated screening length, however, disagrees with the observed size of the dark region.
TaCN layers were deposited using metal-organic chemical-vapor deposition for applications as metal gate electrodes in p-type metal-oxide-semiconductor (pMOS) devices. The films were formed by thermal decomposition of tertiary-amylimido-tris(dimethylamido)tantalum (TAIMATA®) between 400 and 600 °C. The composition was dependent on the growth temperature with increasing C and decreasing N content at higher temperature. Films grown below 500 °C were nearly amorphous and became weakly polycrystalline with a cubic structure at higher growth temperature. The layer density was ∼8.1 g/cm3, about half of the TaCN bulk density. Grazing-incidence x-ray diffraction and transmission electron microscopy showed that the films consist of small polycrystalline grains in an amorphous matrix. The resistivity was found to decrease with increasing growth temperature. Lowest resistivity values were around 1 mΩ cm for films grown at 600 °C. The films formed an ∼4 nm thick insulating surface oxide, which leads to a thickness dependence of the film resistivity. Oxygen was also found to diffuse slowly into the bulk metal, which leads to a resistivity aging effect. The effective work function of the TaCN films was found to be 4.8 eV on HfSiO4 and HfSiON and to shift weakly by high thermal budget annealing toward the Si valence band, reaching 4.9 eV on HfSiO4.
We propose a simple probabilistic optical gate to expand polarization entangled W states. The gate uses one polarization-dependent beamsplitter and a horizontally polarized single photon as an ancilla. The gate post-selectively expands N -photon W states to (N + 1)-photon W states. A feasibility analysis considering the realistic experimental conditions shows that the scheme is within the reach of the current quantum optical technologies.
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