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Spin gapless semiconductors (SGSs) are an intriguing class of quantum materials that bridge the gap between half-metallic ferromagnets and semiconductors.

Materials with high spin–orbit coupling (SOC) are a prerequisite for the realization of spin–orbit torque-based magnetic memories. Transition metal dichalcogenides (TMDs) are an apt choice for such applications due to their high SOC strength. In this work, we have investigated the spin pumping phenomenon at the interface between thin tungsten disulphide (WS2) films and Co2FeAl (CFA) Heusler alloy films by performing ferromagnetic resonance (FMR) measurements on WS2/CFA heterostructures capped with the 4 nm thin Al film. While Raman spectroscopy conclusively proves the number of monolayers in the WS2 films, atomic force microscopy and x-ray reflectivity measurements were used to quantify the smoothness of the grown interfaces (<0.4 nm) as well as the individual layer thicknesses in the heterostructure stacks. Here, we vary the WS2 layer numbers and CFA thicknesses to quantify the spin pumping parameters such as spin mixing conductance, and spin transparency. FMR measurements revealed that damping enhancement reached ∼41% with a monolayer of WS2. Interfacial effective spin mixing conductance and spin transparency of the WS2/CFA interface are found to be 7.47 ± 0.97 nm−2 and 73.35 ± 9.52%, respectively. Thus, high-quality TMDs can be used as efficient materials for magnetic memory device applications.

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