We present evidence, from theory and experiment, that ZnSnN 2 and MgSnN 2 can be used to match the band gap of InGaN without alloying-by exploiting cation disorder in a controlled fashion. We base this on the determination of S, the long-range order parameter of the cation sublattice, for a series of epitaxial thin films of ZnSnN 2 and MgSnN 2 using three different techniques: x-ray diffraction, Raman spectroscopy, and in situ electron diffraction. We observe a linear relationship between S 2 and the optical band gap of both ZnSnN 2 (1.12-1.98 eV) and MgSnN 2 (1.87-3.43 eV). The results clearly demonstrate the correlation between controlled heterovalent cation ordering and the optical band gap, which applies to a broad group of emerging ternary heterovalent compounds and has implications for similar trends in other material properties besides the band gap.
Laser-wakefield accelerators (LWFAs) are high acceleration-gradient plasma-based particle accelerators capable of producing ultra-relativistic electron beams. Within the strong focusing fields of the wakefield, accelerated electrons undergo betatron oscillations, emitting a bright pulse of X-rays with a micrometer-scale source size that may be used for imaging applications. Non-destructive X-ray phase contrast imaging and tomography of heterogeneous materials can provide insight into their processing, structure, and performance. To demonstrate the imaging capability of X-rays from an LWFA we have examined an irregular eutectic in the aluminum-silicon (Al-Si) system. The lamellar spacing of the Al-Si eutectic microstructure is on the order of a few micrometers, thus requiring high spatial resolution. We present comparisons between the sharpness and spatial resolution in phase contrast images of this eutectic alloy obtained v ia X-ray phase contrast imaging at the Swiss Light Source (SLS) synchrotron and X-ray projection microscopy via an LWFA source. An upper bound on the resolving power of 2.7 ± 0.3 μ m of the LWFA source in this experiment was measured. These results indicate that betatron X-rays from laser wakefield acceleration can provide an alternative to conventional synchrotron sources for high resolution imaging of eutectics and, more broadly, complex microstructures.
We report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ∼550°C and low values of nitrogen flux ∼10−5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.
A series of ZnSnN2 films has been grown by plasma assisted molecular beam epitaxy in order to investigate the possibility of controlled cation sublattice disorder as well as its effects on physical and electronic properties of the material. By varying the growth conditions, specifically either the metal to nitrogen flux ratio or the substrate temperature, the authors have confirmed the existence of both the hexagonal and orthorhombic phases of the material via synchrotron x-ray diffraction and in situ reflection high energy electron diffraction measurements. Here, the authors report the results of an initial mapping and analysis of the growth parameter space, as part of continuing efforts to improve material quality.
Experiments demonstrate that under large epitaxial strain a coexisting striped phase emerges in BiFeO3 thin films, which comprises a tetragonal‐like (T′) and an intermediate S′ polymorph. It exhibits a relatively large piezoelectric response when switching between the coexisting phase and a uniform T′ phase. This strain‐induced phase transformation is investigated through a synergistic combination of first‐principles theory and experiments. The results show that the S′ phase is energetically very close to the T′ phase, but is structurally similar to the bulk rhombohedral (R) phase. By fully characterizing the intermediate S′ polymorph, it is demonstrated that the flat energy landscape resulting in the absence of an energy barrier between the T′ and S′ phases fosters the above‐mentioned reversible phase transformation. This ability to readily transform between the S′ and T′ polymorphs, which have very different octahedral rotation patterns and c/a ratios, is crucial to the enhanced piezoelectricity in strained BiFeO3 films. Additionally, a blueshift in the band gap when moving from R to S′ to T′ is observed. These results emphasize the importance of strain engineering for tuning electromechanical responses or, creating unique energy harvesting photonic structures, in oxide thin film architectures.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.