In article number 1400392, Chuan‐Pu Liu and co‐workers report the synthesis of Si‐doped GaN nanowire arrays with various carrier concentrations to investigate the impact of carrier screening on the output performance of alternating‐current (AC) vertical integrated nanogenerators (VINGs). The output voltage and current density of AC VINGs strongly decrease with increasing doping concentration. Consequently, AC VINGs can be optimized if they are composed of piezotronic materials with the lowest possible carrier concentration to prevent the screening effect.
The glancing angle deposition technique can be employed to control the growth direction of InN nanorods, enabling larger deformation attainable merely from external normal forces for potential applications in nanopiezotronic and nanogenerator devices. This study by Chuan‐Pu Liu and co‐workers demonstrates tremendous improvement in electricity output of nanogenerators made of obliquely aligned InN nanorod arrays from the ambient environment, leading to the realization of self‐powered nanodevices.
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