We have investigated the interface of inAslGaSb and InAs/AISb grown by migration-enhanced epitaxy by photoluminescence and Raman spectroscopy. The significant effects of interface bonds, lnSb or GaAs (AlAs). on the luminescence as weii as phonon spectra are discussed. The confined phonon modes in both systems, inAslGaSb and InAsIAISb, are also compared to study the characteristic properties of lnAs heterostructures.

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Room temperature ferromagnetism has been observed in Mn-doped ZnO thin films using radio frequency magnetron sputtering. X-ray diffraction measurements show that the samples possess wurtize structures without secondary phases. Magnetization loops for Mn-doped ZnO thin film which deposited at 300 °C and annealed in O 2 atmosphere at 500 °C were measured at 300 K and show ferromagnetic behaviour. In our study, the result shows that it is the substitutional Mn 2+ ions that make the ferromagnetic ordering in Mn doped ZnO thin films. Ferromagentic ordering becomes weaker at higher concentration of oxygen vacancy.

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