Structural properties of Si films formed by chemical vapor deposition onto amorphous SiO2 substrates have been examined over the temperature and thickness ranges of 650 to 900°C and up to 1 µm respectively.
At 650°C the films were amorphous regardless of their thickness. At 700°C the 0.1 µm-thick films were amorphous, but the <110> preferred orientation developed as the film thickness increased. Above 750°C 0.1 µm-thick films were seen to have a random orientation, and with increasing film thickness above 0.3 µm, the <100> and <111> orientations developed in the temperature ranges of 750 to 825°C and 825 to 850°C respectively. The influence of heating at elevated temperatures on film strutucres is also presented.
Dominant monohydride bonding in hydrogenated amorphous silicon thin films formed by plasma enhanced chemical vapor deposition at room temperature J. Vac. Sci. Technol. A 15, 77 (1997); 10.1116/1.580480 Amorphous oxygencontaining hydrogenated carbon films formed by plasma enhanced chemical vapor deposition J.
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