The hot-carrier-induced device degradation in partially depleted silicon-on-insulator (SOI) devices has been investigated under ac stress conditions. The device degradation of both floating-body SOI devices and body contacted SOI devices have been measured and analyzed for different ac stress frequencies and gate bias voltages. Possible degradation mechanisms are suggested.Index Terms-Hot carriers, insulated gate FETs, MOS devices, semiconductor device reliability, silicon-on-insulator (SOI) technology.
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