Some heavy fermion materials show so-called hidden-order phases which are invisible to many characterization techniques and whose microscopic origin remained controversial for decades. Among such hidden-order compounds, CeB6 is of model character due to its simple electronic configuration and crystal structure. Apart from more conventional antiferromagnetism, it shows an elusive phase at low temperatures, which is commonly associated with multipolar order. Here we show that this phase roots in a Fermi surface instability. This conclusion is based on a full 3D tomographic sampling of the electronic structure by angle-resolved photoemission and comparison with inelastic neutron scattering data. The hidden order is mediated by itinerant electrons. Our measurements will serve as a paradigm for the investigation of hidden-order phases in f-electron systems, but also generally for situations where the itinerant electrons drive orbital or spin order.

We have investigated the properties of cleaved SmB 6 single crystals by x-ray photoelectron spectroscopy. At low temperatures and freshly cleaved samples a surface core level shift is observed which vanishes when the temperature is increased. A Sm valence between 2.5 and 2.6 is derived from the relative intensities of the Sm 2+ and Sm 3+ multiplets. The B/Sm intensity ratio obtained from the core levels is always larger than the stoichiometric value. Possible reasons for this deviation are discussed. The B 1s signal shows an unexpected complexity: An anomalous low energy component appears with increasing temperature and is assigned to the formation of a suboxide at the surface. While several interesting intrinsic and extrinsic properties of the SmB 6 surface are elucidated in this manuscript, no clear indication of a trivial mechanism for the prominent surface conductivity is found.

We investigate the ultrafast dynamics of the photoinduced electron transfer between surface-adsorbed indoline D149 dye and porous ZnO as used in the working electrodes of dye-sensitized solar cells. Transient absorption spectroscopy was conducted on the dye in solution, on solid state samples and for the latter in contact to a I(-)/I(3)(-) redox electrolyte typical for dye-sensitized solar cells to elucidate the effect of each component in the observed dynamics. D149 in a solution of 1:1 acetonitrile and tert-butyl alcohol shows excited-state lifetimes of 300±50 ps. This signature is severely quenched when D149 is adsorbed to ZnO, with the fastest component of the decay trace measured at 150±20 fs due to the charge-transfer mechanism. Absorption bands of the oxidized dye molecule were investigated to determine regeneration times which are in excess of 1 ns. The addition of the redox electrolyte to the system results in faster regeneration times, of the order of 1 ns.

The electronic properties of NdGaO3/SrTiO3, LaGaO3/SrTiO3, and LaAlO3/SrTiO3 interfaces, all showing an insulator-to-metal transition as a function of the overlayer-thickness, are addressed in a comparative study based on x-ray absorption, x-ray photoemission and resonant photoemission spectroscopy. The nature of the charge carriers, their concentration and spatial distribution as well as the interface band alignments and the overall interface band diagrams are studied and quantitatively evaluated. The behavior of the three analyzed heterostructures is found to be remarkably similar. The valence band edge of all the three overlayers aligns to that of bulk SrTiO3. The near-interface SrTiO3 layer is affected, at increasing overlayer thickness, by the building-up of a confining potential. This potential bends both the valence and the conduction band downwards. The latter one crossing the Fermi energy in the proximity of the interface and determines the formation of an interfacial band offset growing as a function of thickness. Quite remarkably, but in agreement with previous reports for LaAlO3/SrTiO3, no electric field is detected inside any of the polar overlayers. The essential phenomenology emerging from our findings is discussed on the base of different alternative scenarios regarding the origin of interface carriers and their interaction with an intense photon beam.

LaAlO3 and NdGaO3 thin films of different thicknesses have been grown by pulsed laser deposition on TiO2-terminated SrTiO3 single crystals and investigated by soft X-ray photoemission spectroscopy. The surface sensitivity of the measurements has been tuned by varying photon energy hν and emission angle Θ. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From our quantitative analysis we conclude that during the growth process Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide.