A perfect crystalline phases of cuprous oxide were synthesized using electrochemical method at different duration ( 15, 30 and 60 min). The deposited samples were examined by XRD, SEM, UV-Vis absorption and Mott-Schottky measurements. The effect of the deposition time on the optical and dielectric properties of Cu 2 O was studied in detail. The x-ray diffraction indicated increasing of crystallinity and crystallite size with increasing of deposition time. SEM micrographs exhibited grains with three-faced pyramid shape and grains size increased with improvement of crystallinity. Optical study is performed to calculate optical band gap (E g ), absorption coefficient (α), extinction coefficient (k), refractive index (n), dielectric constants (ε), urbach energy (E U ) and optical conductivity (σ opt ) using the transmittance and absorption spectra in the wavelength range of 400-1100 nm. Among all grown samples, the film deposited at 60 min shows interesting optical and dielectric properties. The Mott-Schottky analysis shows that the film deposited at 60 min has a low carrier density compared to samples deposited in other deposition times.

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