Cl• and Cl2 •– radicals contribute to the degradation of trace organic contaminants (TrOCs) such as pharmaceutical and personal care products and endocrine-disrupting chemicals. However, little is known about their reaction rate constants and mechanisms. In this study, the reaction rate constants of Cl• and Cl2 •– with 88 target compounds were determined using laser flash photolysis. Decay kinetics, product buildup kinetics, and competition kinetics were applied to track the changes in their transient spectra. Cl• exhibited quite high reactivity toward TrOCs with reaction rate constants ranging from 3.10 × 109 to 4.08 × 1010 M–1 s–1. Cl2 •– was less reactive but more selective, with reaction rate constants varying from <1 × 106 to 2.78 × 109 M–1 s–1. Three QSAR models were developed, which were capable of predicting the reaction rate constants of Cl2 •– with TrOCs bearing phenol, alkoxy benzene, and aniline groups. The detection of Cl•-adducts of many TrOCs suggested that Cl• addition was an important reaction mechanism. Single electron transfer (SET) predominated in reactions of Cl• with TrOCs bearing electron-rich moieties (e.g., sulfonamides), and their cation radicals were observed. Cl• might also abstract hydrogen atoms from phenolic compounds to generate phenoxyl radicals. Moreover, Cl• could react with TrOCs through multiple pathways since more than one transient intermediate was detected simultaneously. SET was the major reaction mechanism of Cl2 •– reactions with TrOCs bearing phenols, alkoxy benzenes, and anilines groups. Cl2 •– was found to play an important role in TrOC degradation, though it has been often neglected in previous studies. The results improve the understanding of halogen radical-involved chemistry in TrOC degradation.

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Here we report the fabrication of a high performance metal oxide semiconductor (MOS) sensor for the detection of hydrogen sulfide (H 2 S) using PdRh bimetal hollow nanocube (HC) with Rh-rich hollow frame and Pd−rich core frame as sensitizing materials. PdRh bimetal HC with the edge-length about 10 nm was prepared by chemical etching PdRh bimetal solid nanocube (SC) in HNO 3 aqueous solution. The results of gas-sensing tests indicate that the response value order of the MEMS gas sensors based on MOSs (including ZnO, MoO 3 and SnO 2 ) is as follows: R PdRh HC/MOS > R PdRh SC/MOS > R MOS . First, in the system of ZnO, gas sensor modified by PdRh (PdRh SC/ZnO and PdRh HC/ ZnO) possess enhanced H 2 S sensing performance with a better response and excellent lowconcentration detection capability (down to 15 ppb) comparing to pure ZnO. The improved H 2 S sensing performance could be attributed to the good conductivity of Rh−rich frame, the high catalytic activity of PdRh bimetal and formation of Schottky barrier-type junctions and defect. Second, PdRh HC/ZnO sensor shows better response (185-1 ppm of H 2 S) compared to PdRh SC/ZnO sensor (108-1 ppm of H 2 S), which is due to the higher specific surface area of PdRh HC/ZnO and good gas diffusion of the hollow structure. This work indicate that the sensitization characteristics of PdRh bimetal HC will provide new paradigms for the future development of the high performance sensor.