A numerical study of the low-temperature tunneling conductance G(T) of the “dirty” (low concentrations of the same non-magnetic impurities in the I layer) N-I-N junction (N is a normal metal; I is an insulator) with random quantum jumpers penetrating the disordered I-layer is performed. In a wide range of low impurity concentrations, the dependence G(T) anomalously, both qualitatively and quantitatively, differs from the corresponding dependence G0(T) in the “pure” (without impurities in the I layer) N-I-N junction. The numerical analysis of the dependence G(T) shows the possibility of the experimental manifestation of these anomalies.
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