Ionic transport in solids parallel to grain or phase boundaries is usually strongly enhanced compared to the bulk. Transport perpendicular to an interface (across an interface) is often much slower. Therefore in modern micro- and nanoscaled devices, a severe influence on the ionic/atomic transport properties can be expected due to the high density of interfaces.Transport processes in boundaries of ionic materials are still not understood on an atomic scale. In most of the studies on ionic materials the interfacial transport properties are explained by the influence of space charge regions. Here we discuss the influence of interfacial strain at semicoherent or coherent heterophase boundaries on ionic transport along these interfaces in ionic materials. A qualitative model is introduced for (untilted and untwisted) hetero phase boundaries. For experimental verification, the interfacial oxygen ionic conductivity of different multilayer systems consisting of cubic ZrO(2) stabilised by aliovalent dopands (YSZ, CSZ) and an insulating oxide is investigated as a function of structural mismatch. Recent results on extremely fast ionic conduction in YSZ/SrTiO(3) thin film systems ("colossal ionic concuctivity at interfaces") is discussed from the viewpoint of strain effects.

Internal and external interfaces in solids exhibit completely different transport properties compared to the bulk. Transport parallel to grain or phase boundaries is usually strongly enhanced. Transport perpendicular to an interface is usually blocked, i.e., transport across an interface is often much slower. Due to the high density of interfaces in modern micro- and nanoscaled devices, a severe influence on the total transport properties can be expected. In contrast to diffusion in metal grain boundaries, transport phenomena in boundaries of ionic materials are still less understood. The specific transport properties along metal grain boundaries are explained by structural factors like packing densities or dislocation densities in the interface region. In most studies dealing with ionic materials, the interfacial transport properties are merely explained by the influence of space charge regions. In this study the influence of the interface structure on the interfacial transport properties of ionic materials is discussed in analogy to metallic materials. A qualitative model based on the density of misfit dislocations and on interfacial strain is introduced for (untilted and untwisted) phase boundaries. For experimental verification, the interfacial ionic conductivity of different multilayer systems consisting of stabilised ZrO2 and an insulating oxide is investigated as a funtion of structural mismatch. As predicted by the model, the interfacial conductivity increases when the lattice mismatch is increased.Graphical abstract

Multilayer samples of the type (YSZ|Sc2O3) × n with layer thicknesses between 8 nm (n=100) and 250 nm (n=5) were prepared on (0001) sapphire substrates by pulsed laser deposition (PLD). The samples were characterised using X-ray diffraction (XRD), scanning electron microscopy (HRSEM) and transmission electron microscopy (TEM/HRTEM, SAED (selected-area electron diffraction) and quantitative EELS (electron energy-loss spectroscopy)). The polycrystalline layers show a columnar microstructure, which is typical for the used preparation technique. The layers are highly textured and only one axial orientation relation is found between yttria-stabilised zirconia (YSZ), scandium oxide and the substrate: (0001) Al2O3‖(111) Sc2O3‖(111) YSZ. A preferred orientation relationship also exists for the azimuthal rotation of the crystallites, which was demonstrated by SAED, XRD pole figure measurements and fast Fourier transformation (FFT) of HRTEM micrographs. The interfaces between YSZ, Sc2O3 and the substrate are sharp and do not contain diffuse transition regions. Dislocations appear not to be arranged in regular arrays. With increasing interface density (thinner individual layers in the multilayer), the conductivity of the multilayers decreases. We relate this to the negative nominal misfit present at the YSZ|Sc2O3 interfaces (compressive stress in YSZ at the phase boundaries). This observation agrees well with the previously investigated case of YSZ|Y2O3 (A. Peters et al., Phys. Chem. Chem. Phys., 2008, 10, 4623), where tensile misfit strain was present in YSZ at the phase boundaries, leading to a conductivity increase.

A phenomenological and analytical model for the influence of strain effects on atomic transport in columnar thin films is presented. A model system consisting of two types of crystalline thin films with coherent interfaces is assumed. Biaxial mechanical strain ε0 is caused by lattice misfit of the two phases. The conjoined films consist of columnar crystallites with a small diameter l. Strain relaxation by local elastic deformation, parallel to the hetero-interface, is possible along the columnar grain boundaries. The spatial extent δ0 of the strained hetero-interface regions can be calculated, assuming an exponential decay of the deformation-forces. The effect of the strain field on the local ionic transport in a thin film is then calculated by using the thermodynamic relation between (isostatic) pressure and free activation enthalpy ΔG(#). An expression describing the total ionic transport relative to bulk transport of a thin film or a multilayer as a function of the layer thickness is obtained as an integral average over strained and unstrained regions. The expression depends only on known material constants such as Young modulus Y, Poisson ratio ν and activation volume ΔV(#), which can be combined as dimensionless parameters. The model is successfully used to describe own experimental data from conductivity and diffusion studies. In the second part of the paper a comprehensive literature overview of experimental studies on (fast) ion transport in thin films and multilayers along solid-solid hetero-interfaces is presented. By comparing and reviewing the data the observed interface effects can be classified into three groups: (i) transport along interfaces between extrinsic ionic conductors (and insulator), (ii) transport along an open surface of an extrinsic ionic conductor and (iii) transport along interfaces between intrinsic ionic conductors. The observed effects in these groups differ by about five orders of magnitude in a very consistent way. The modified interface transport in group (i) is most probably caused by strain effects, misfit dislocations or disordered transition regions.

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