The observation of a 0.5(2e 2 /h) conductance plateau in asymmetrically biased quantum point contacts (QPCs) with in-plane side gates (SGs) has been attributed to the onset of spin-polarized current through these structures. For InAs QPCs with the same width but longer channel length, there is roughly a fourfold increase in the range of common sweep voltage applied to the SGs over which the 0.5(2e 2 /h) plateau is observed when the QPC aspect ratio (ratio of length over width of the narrow portion of the structure) is increased by a factor 3. Non-equilibrium Green's function simulations indicate that the increase in the size of the 0.5(2e 2 /h) plateau is due to an increased importance, over a larger range of common sweep voltage, of the effects of electronelectron interactions in QPC devices with larger aspect ratio. The use of asymmetrically biased QPCs with in-plane SGs and large aspect ratio could therefore pave the way to build robust spin injectors and detectors for the successful implementation of spin field effect transistors.(a) Corresponding authors: daspm@nitk.ac.in and
Resistive switching (RS)‐based random access memory has been envisaged as a viable alternative to existing memory technology due to its nonvolatility, high switching speed, high endurance/retention, and considerably low operating voltage. Herein, a new uniform, repetitive, and stable RS phenomenon is demonstrated based on very low‐cost two‐terminal metal–insulator–metal stack fabricated using a highly redox‐active vanadium‐based polyoxometalate (POM) molecular clusters, [V10O28]6−—belonging to polyoxovanadate (POV) family. The RS is observed to be unipolar and nonvolatile in nature, and occur at a fairly low operating bias voltage (less than 2 V), making it suitable for low‐power operations. The switching event is attributed to the cycling between formation and rupture of tiny conductive nanofilaments formed due to trapping and detrapping of positively charged ionized oxygen vacancy sites present in the active switching layer of [V10O28]6−. POMs, in their rich abundance, are highly stable early transition‐metal oxide nanosized clusters, capable of storing as well as releasing a large number of electrons. In addition, they can undergo fast and reversible redox reactions (both in solid and liquid electrolyte media) in “stepwise” manner—a property that makes them a promising candidate for ultrafast and multi‐level nonvolatile molecular memory for high‐density data storage. Preliminary investigations on the POV‐based memory cells result in device resistance ratio ≈25, endurance for more than 200 cycles, and stable retention time around 2200 s, in fully open air condition.
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