Among europium compounds, pressure induced valence transitions and/or intermediate valence states are often observed. In such systems, applying pressure of several GPa can drive a Eu valence from divalent to almost trivalent. Non-centrosymmetric EuRhGe3 possesses magnetic Eu2+ ions and exhibits antiferromagnetic ordering at ∼11 K at ambient pressure. Pressure resistant magnetic ordering and stable divalent Eu state have been reported in EuRhGe3. Here, we study the pressure evolution of the Eu valence of EuRhGe3 by high resolution x-ray absorption spectroscopy using the partial fluorescence yield method. Our study reveals a successive increase of the Eu valence with increasing pressure without any valence transition. The obtained mean Eu valence approaches ∼2.4 around 40 GPa at 300 K. The experimental data are also analyzed by a full multiplet configuration interaction calculation based on the single impurity Anderson model. The analysis reveals a decrease of the Eu 4f orbital occupation by applying pressure. Pressure evolution of the electronic structure studied by density functional theory suggests that the Rh ions have little contribution to the pressure evolution of the Eu valence, while it implies an active involvement of the Ge ions.

Semiconducting SnSe, an analog of black phosphorus, recently attracted great scientific interest due to a disputed report of a large thermoelectric figure of merit, which has not been reproduced subsequently. Here we concentrate on the low-temperature ground state. To gain a better understanding of the system, we present magneto-transport properties in high-quality single crystals of as-grown, lightly doped SnSe down to liquid helium temperatures. We show that SnSe behaves as a p-type doped semiconductor in the vicinity of a metal-insulator transition. Electronic transport at the lowest temperatures is dominated by the hopping mechanism. Negative magnetoresistance at low fields is well described by antilocalization, while positive magnetoresistance at higher fields is consistent with the shrinkage of localized impurity wavefunctions. At higher temperatures, a dilute metallic regime is realized where elusive T2 and B2 resistivity dependence is observed, posing a challenge to theoretical comprehension of the underlying physical mechanism.

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