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The effect of thermal annealing temperature on electrical and structural properties of Rh/Au Schottky contacts to n-type GaN (∼4 × 10 17 cm −3 ) has been investigated by current-voltage (I-V), capacitance-voltage (C-V), x-ray diffraction (XRD) and Auger electron microscopy (AES). Calculations showed that the Schottky barrier height of the as-deposited Rh/Au contact was 0.57 eV (I-V) and 0.62 eV (C-V), respectively. However, the Schottky barrier height increased with annealing temperature up to 500 • C, reaching maximum values of 0.84 eV (I-V) and 1.05 eV (C-V). Based on the Auger electron microscopy and x-ray diffraction results, the formation of gallide phases at the Rh/Au/n-GaN interface could be the reason for the increase of Schottky barrier heights after annealing at temperatures 400 • C and 500 • C.

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