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Goss texture development in silicon steels has been studied through EBSP measurements and various computer simulations and calculations. The results of these studies suggest the possible role of high energy grain boundaries (HEGB) in the abnormal growth of Goss grains. The Goss orientation has a fraction of HEGBs that is higher than any other commonly observed orientations in the primary recrystallized silicon steels. The HEGBs have high GB diffusion coefficients which cause rapid coarsening of precipitates on these HEGBs and release them earlier, at the time when other GBs are still pinned. A difference in the mobility between the HEGBs and the other GBs favours the abnormal growth of Goss grains. The Monte-Carlo methods that have been developed and used to validate this assumption have generated abnormally growing Goss grains. The experimentally observed grain boundary character distributions (GBCD) around the growing Goss grains have been reproduced in simulation by assuming high mobility to HEGBs. Apart from the high mobility differences between different GBs, the importance of the fraction of GBs with high mobility around growing Goss grains is realized.