This paper presents the findings of research into field effect transistors (FET) based on aluminum doped zinc oxide (AZO) nanowires that resulted in developing an effective field-effect channal conductivity control method implemented by intensive modulation of charge carriers mobility. AZO (Al ∼ 2% at.) nanowires were fabricated by electrospinning technique, and the obtained nanocrystalline nanowires had diameter of 150 – 200 nm and average grain size of ∼10 nm. FET was assembled using AZO nanowires with back side gate configuration and demonstrated n-type behavior and on-off current ratio up to 103. Using grain boundary (GB) model we have found electron concentration in the FET channel in off-state and on-state to be 1.8·1019 cm−3 and 4.1·1019 cm−3, respectively. Meanwhile, the corresponding effective field-effect mobility changed significantly from 2.5·10−6 cm2/V·s to 3.3·10−3 cm2/V·s. Mobility change (∼103) was attributed to lowering of potential barrier inside GB. Areal trap concentration was estimated as 3·1013 cm−2 and donor concentration as 4.5·1019 cm−3. The results presented open up new opportunities for the developing of a new type of mobility-modulation field-effect transistors.

Indium-zinc oxide (IZO) nanofiber matrices are synthesized on SiO2-covered silicon substrates by the electrospinning method. The nanofibers’ dimensions, morphology, and crystalline structure are characterized by scanning electron microscopy, atomic force microscopy, and X-ray diffraction. The results of studying the electrical properties of nanofibers, as well as their sensitivity to UV radiation depending on the In-to-Zn concentration ratio, are presented. It is shown that the highest sensitivity to UV is observed at the indium content of about 50 atomic %. The photocurrent increment with respect to the dark current is more than 4 orders of magnitude. The response and recovery times are 60 and 500 sec, respectively. The results obtained suggest that IZO nanofibers can find application as UV sensors with improved characteristics.

Dense homogeneous fabric composed from continuous bead‐free erbium‐doped sodium potassium niobate (Er:NKN) 100 μm long and 100‐200 nm in diameter nanofibers was sintered by sol‐gel calcination assisted electrospinning technique. X‐ray diffraction revealed preferential cube‐on‐cube [001]‐directional growth of fibers containing predominantly monoclinic Na0.35K0.65NbO3‐type phase and significantly less of tetragonal NbO2, cubic Er2O3, and monoclinic ErNbO4 phases. Er doping with the concentration of 2 at.% provides readily detectable room‐temperature broad‐band photoluminescence (PL) centered at λPL = 0.55 and 0.98 μm being pumped, respectively, with 532 and 785 nm lasers. Impedance spectroscopy and static electrical tests revealed ferroelectric properties, electric field induced resistance switching and strong rectification effect in nanoporous sandwich Au/Er:NKN/Pt capacitive cell. Memristor‐type current‐voltage (I‐V) characteristics originate from the electrochemical migration of oxygen vacancies at the n‐type NKN oxide/high work function Pt cathode junction interface.

-The sol-gel science and technology demonstrate an intense development over past few decades accompanied by important applications in electronics. The sol-gel technology represents a typical example of nanotechnology, since the gel products are actually nanocomposites or may contain nanoparticles. That is why the sol-gel science plays a crucial role in the R&D of contemporary nanotechnology for the fabrication of novel materials with new functional properties. In this paper we present an overview of our previous results on the properties of vanadium oxide gel structures, as well as report some recent findings in this area. Electrical and optical (including electrochromic effect) properties, influence of doping with tungsten and hydrogen, electrical switching. Moreover, the properties of vanadium oxide micro-and nanofibers are systematically described and discussed. Applied potentialities of the described phenomena for micro-and optoelectronics (electrochromic devices, sensors, electronic switches, etc) are also discussed.Index Terms -Transition metal oxides, sol-gel, vanadium oxide, metal-insulator transition, electrochromic effect. 1