Reconstructions of Mediterranean ocean temperature fields back to 1950 show a proxy relationship between heat content changes in the North Atlantic and the Western Mediterranean Deep Water (WMDW) formed in the Gulf of Lions in winter, because of consistent air‐sea heat fluxes over these areas, strongly correlated to the North Atlantic Oscillation (NAO).
The effect of ion milling on electrical properties of vacancy-and arsenic-doped p-Hg 1−x Cd x Te (MCT) (x ∼ 0.22) has been studied. Samples for the study were fabricated by thermal annealing of n-type heterostructures grown by molecular beam epitaxy (MBE) on GaAs. Their behaviour under ion milling was compared to that of MCT bulk samples and films grown by liquid and vapour phase epitaxy. Residual donor concentration in the MBE-grown structures was found to be of the order of 10 15 cm −3 , which is typical for MCT. Unique to the MBE structures was high electron concentration (∼10 17 cm −3 ) straight after the milling. We suppose that this fact reflected ion-milling-induced activation of an initially neutral defect, which was formed in the heterostructures during the growth. A possible nature of the defect is discussed.
Conductivity type conversion in ion-milled As-doped p-HgCdTe heterostructures grown by molecular beam epitaxy on GaAs substrates has been studied. It was found that in these heterostructures, donor center concentration (∼1017cm−3) after ion milling was much higher than that could have been expected as a result of interaction of interstitial mercury atoms, generated under the milling, with the As acceptors. One possible reason of the donor center formation is the activation of an intrinsic neutral defect, which was present in the HgCdTe:As prior to the ion milling. The nature of the donor centers formed is discussed.
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