An electron-emission mechanism for cold cathodes is described based on the enhancement of electric fields at metaldiamond-vacuum triple junctions. Unlike conventional mechanisms, in which electrons tunnel from a metal or semiconductor directly into vacuum, the electrons here tunnel from a metal into diamond surface states, where they are accelerated to energies sufficient to be ejected into vacuum. Diamond cathodes designed to optimize this mechanism exhibit some of the lowest operational voltages achieved so far.Conventional cathodes for applications from television to power transmitters use heat to boil electrons out of a metal into vacuum. However, these cathodes do not have the power efficiency or the dimensional stability to be used with micrometre-size structures, which are required for flat-panel displays and some power amplifiers. Cathodes that can be scaled to micrometre sizes use high electric fields instead of heat to pull electrons out of a solid into vacuum. The reliability and current density of these electric field emission cathodes depend upon both their geometry and the material used in their construction. Here we review field emission cathodes and show that a new cathode geometry which uses a novel material, diamond, has properties superior to those of previous cathodes.For the cold cathodes we discuss, emission is obtained with a large electric field that causes electrons to tunnel over a potential barrier out of a metal substrate into vacuum. Material and fabrication techniques have both been used to increase emission by enhancing the electric field and reducing the barrier over which the electrons must tunnel. Excellent low electric field electron emission has been reported from diamond and amorphous diamond-like films on metal substrates, but practical application of these cathodes is limited by a serious lack of reproducibility 1-3 and inconsistency (M. E. Kordesch, personal communications). Emission originates from a few localized sites, which were believed to be due to the inconsistent bulk properties of the cathode material. The enhanced emission at the interface between the diamond surface, a conductive region, and vacuum, a new emission mechanism, may explain the localization of emission sites. If so, a discontinuous diamond film that provides an abundance of interfaces should be a better electron emitter than a continuous diamond film 4,5 .We now describe two generally accepted emission mechanisms: geometric electric-field enhancement 6 , and Schottky diode with a negative-electron-affinity semiconductor 2,3 . Semiconductors and insulators have a negative electron affinity (NEA) if the minimum energy of electrons in the conduction band is above the minimum energy of electrons in vacuum. Experimental results are then described that cannot be explained by the previous emission mechanisms. A mechanism is proposed that combines the high electric fields that can be obtained at the intersection of a semiconductor surface, a metal substrate and vacuum (a so-called triple junction) 7,8 with t...
Field emission of electrons from boron- and nitrogen-doped diamond is compared. Emission from boron-doped diamond requires vacuum electric fields of 20–50 V μm−1, while nitrogen-doped, type Ib diamond requires fields of 0–1 V μm−1. Since boron-doped diamond is very conductive, very little voltage drop occurs in the diamond during emission. Nitrogen-doped diamond is insulating, so during emission a potential of 1–10 kV appears in the diamond. This potential is a function of the back contact metal-diamond interface. A roughened interface substantially reduces the potential in the diamond and increases emission. The electrons are often emitted from the nitrogen-doped diamond as beamlets. These beamlets leave the surface of the diamond at angles up to 45° from the substrate normal. Although the vacuum field is small, these electrons have energies of several kV. It is unknown whether the electrons are accelerated to these energies in the bulk of the diamond, or at high electric fields near the emitting surface.
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