About 500-nm-thick films of Ge,-,,6Sic64 and Ge o.28Si0.72 grown epitaxially on (100)Si have been oxidized at 700 "C in wet ambient. A uniform Ge,Sit-,O, oxide layer forms with a smooth interface between it and the unoxidized Ge$i, _ X layer below. The composition and structure of that layer remains unchanged as monitored by backscattering spectrometry or cross-sectional transmission electronic microscopy. The oxide of both samples grows as square root of oxidation duration. The parabolic rate constant increases with the Ge content and is larger than that for wet oxidation of pure Si at the same temperature. The absence of a regime of linear growth at this relatively low temperature indicates a much enhanced linear rate constant.
Experimental evidence of strain relaxed domain structure in (100)/(001)-oriented epitaxial lead titanate thick films grown by metal organic chemical vapor deposition J. Appl. Phys.
Vanadium pentoxide (vanadia) is a wide band gap semiconductor. Its layered orthorhombic structure consists of alternating sublayers of V+O atoms and 0 atoms (vanadyl 0) alone aligned perpendicular to the b-axis. This unique structure makes vanadia a useful host for alkali atom intercalation for electrochromic applications, and therefore, an understanding of its optical properties is important. Here, we study the optical absorption characteristics of vanadia in the incident photon energy range E=2.5-6.0 eV (X=490-200 nm). The material is in the form of 0. ltm thick films sputter deposited in Ne/O 2 discharges. Two types of films were studied: single-oriented films with the b-axis perpendicular to the substrate, and amorphous films with an oxygen deficiency. The optical absorption coefficient, oc(E), was determined and interpreted in terms of the structure of the V 3d conduction band. Amorphous, O-deficient vanadia were examined for room temperature aging and were found to oxidize and increase in transmittance in the photon energy range studied.
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