Thermally stimulated discharge current measurements were performed to study slow relaxation processes in two canonical charge density wave systems K(0.3)MoO(3) and o-TaS(3). Two relaxation processes were observed and characterized in each system, corroborating the results of dielectric spectroscopy. Our results are consistent with the scenario of the glass transition on the charge density wave superstructure level. In particular, the results directly prove the previously proposed criterion of charge density wave freezing based on the interplay of charge density wave pinning by impurities and screening by free carriers. In addition, we obtained new information on distribution of relaxation parameters, as well as on nonlinear dielectric response both below and above the threshold field for charge density wave sliding.

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The temperature dependence of the low-temperature dielectric response is studied in o-TaS 3 samples doped by Nb, Se, and Ni and for nominally pure ones. It is found, that the low-temperature dielectric constant depends anomalously on doping and is higher for doped crystals, whereas the temperature dependence of the characteristic time of all samples follows the activation law with nearly the same activation energy ∼ 400 K (T > 20 K).The observed behaviour is inconsistent with all available explanations of the low-temperature dielectric anomaly.

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