We report measurements of electrical resistivity under pressure to 5.8 GPa, magnetization to 6.7 GPa, and ac susceptibility to 7.1 GPa in KFe2As2. The previously reported change of slope in the pressure dependence of the superconducting transition temperature Tc(p) at a pressure p * ∼ 1.8 GPa is confirmed, and Tc(p) is found to be nearly constant above p * up to 7.1 GPa. The T -p phase diagram is very sensitive to the pressure conditions as a consequence of the anisotropic uniaxial pressure dependence of Tc. Across p * , a change in the behavior of the upper critical field is revealed through a scaling analysis of the slope of Hc 2 with the effective mass as determined from the A coefficient of the T 2 term of the temperature-dependent resistivity. We show that this scaling provides a quantitative test for the changes of the superconducting gap structure and suggests the development of a kz modulation of the superconducting gap above p * as a most likely explanation.

The evolution of a quantum state undergoing radiative decay depends on how its emission is detected. If the emission is detected in the form of energy quanta, the evolution is characterized by a quantum jump to a lower energy state. In contrast, detection of the wave nature of the emitted radiation leads to different dynamics. Here, we investigate the diffusive dynamics of a superconducting artificial atom under continuous homodyne detection of its spontaneous emission. Using quantum state tomography, we characterize the correlation between the detected homodyne signal and the emitter's state, and map out the conditional back-action of homodyne measurement. By tracking the diffusive quantum trajectories of the state as it decays, we characterize selective stochastic excitation induced by the choice of measurement basis. Our results demonstrate dramatic differences from the quantum jump evolution associated with photodetection and highlight how continuous field detection can be harnessed to control quantum evolution.

In quantum physics, measurements give random results and yield a corresponding random backaction on the state of the system subject to measurement. If a quantum system is probed continuously over time, its state evolves along a stochastic quantum trajectory. To investigate the characteristic properties of such dynamics, we perform weak continuous measurements on a superconducting qubit that is driven to undergo Rabi oscillations. From the data we observe a number of striking temporal correlations within the time dependent signals and the quantum trajectories of the qubit, and we discuss their explanation in terms of quantum measurement and photodetection theory.

We use homodyne detection to monitor the radiative decay of a superconducting qubit. According to the classical theory of conditional probabilities, the excited state population differs from an exponential decay law if it is conditioned upon a later projective qubit measurement. Quantum trajectory theory accounts for the expectation values of general observables, and we use experimental data to show how a homodyne detection signal is conditioned upon both the initial state and the finally projected state of a decaying qubit. We observe, in particular, how anomalous weak values occur in continuous weak measurement for certain pre-and post-selected states. Subject to homodyne detection, the density matrix evolves in a stochastic manner, but it is restricted to a specific surface in the Bloch sphere. We show that a similar restriction applies to the information associated with the post-selection, and thus bounds the predictions of the theory.

Qubit information processors are increasing in footprint but currently rely on e-beam lithography for patterning the required Josephson junctions (JJs). Advanced optical lithography is an alternative patterning method, and we report on the development of transmon qubits patterned solely with optical lithography. The lithography uses 193 nm wavelength exposure and 300-mm large silicon wafers. Qubits and arrays of evaluation JJs were patterned with process control which resulted in narrow feature distributions: a standard deviation of 0.78% for a 220 nm linewidth pattern realized across over half the width of the wafers. Room temperature evaluation found a 2.8 − 3.6% standard deviation in JJ resistance in completed chips. The qubits used aluminum and titanium nitride films on silicon substrates without substantial silicon etching. T1 times of the qubits were extracted at 26 µs -27 µs, indicating a low level of material-based qubit defects. This study shows that large wafer optical lithography on silicon is adequate for high-quality transmon qubits, and shows a promising path for improving many-qubit processors.