We have performed systematic measurements of the splitting kinetics induced by H-only and He + H sequential ion implantation into relaxed Si 0.8 Ge 0.2 layers and compared them with the data obtained in Si. For H-only implants, Si splits faster than Si 0.8 Ge 0.2 . Sequential ion implantation leads to faster splitting kinetics than H-only in both materials and is faster in Si 0.8 Ge 0.2 than in Si. We have performed secondary ion mass spectrometry, Rutherford backscattering spectroscopy in channeling mode, and transmission electron microscopy analyses to elucidate the physical mechanisms involved in these splitting phenomena. The data are discussed in the framework of a simple phenomenological model in which vacancies play an important role.
This paper reports the first demonstration of 200 mm InGaAs-on-insulator (-o-I) fabricated by direct wafer bonding technique (DWB) with III-V donor wafer epitaxially grown on 200 mm Si wafer. The measured threading dislocation density (TDD) of the In 0.53 Ga 0.47 As (InGaAs) active layer does not degrade after bonding and layer transfer. Working pseudo-MOS transistors are demonstrated. The fabrication of thin InGaAs-o-I is achieved, using a 50 nm BOX and InGaAs layer as low as 90 nm.
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