The formation of undislocated three-dimensional (3D) islands during semiconductor heteroepitaxy is studied using self-consistent rate equations. Lattice misfit strain is presumed to influence the rate at which atoms detach from two-dimensional (2D) islands and the rate at which 2D islands transform to 3D islands. The calculated dependence of the 3D island densities on growth rate and coverage compares favorably with experimental results for InP grown on GaP-stabilized GaAs(001) by metal-organic vapor phase epitaxy. [S0031-9007(97)03763-0]
We have used transmission electron microscopy to determine the morphology of InP Stranski–Krastanow islands in GaInP, grown by metalorganic chemical vapor deposition at 580 °C. We investigated both capped and uncapped islands. It was found that the fully developed islands have the principal shape of truncated pyramids with a hexagonal base both before and after overgrowth. The planes defining the islands are of {001}, {110}, and {111} types. The base dimensions are 40–50 nm and 55–65 nm in the [1̄10] and [110] directions, respectively, and the height is 12–18 nm.
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