We show a simple, robust, chemical route to the fabrication of ultrahigh-density arrays of nanopores with high aspect ratios using the equilibrium self-assembled morphology of asymmetric diblock copolymers. The dimensions and lateral density of the array are determined by segmental interactions and the copolymer molecular weight. Through direct current electrodeposition, we fabricated vertical arrays of nanowires with densities in excess of 1.9 x 10(11) wires per square centimeter. We found markedly enhanced coercivities with ferromagnetic cobalt nanowires that point toward a route to ultrahigh-density storage media. The copolymer approach described is practical, parallel, compatible with current lithographic processes, and amenable to multilayered device fabrication.
† These authors contributed equally to this workThe recent discovery that a spin-polarized electrical current can apply a large torque to a ferromagnet, through direct transfer of spin angular momentum, offers the intriguing possibility of manipulating magnetic-device elements without applying cumbersome magnetic fields. 1-16 However, a central question remains unresolved:What type of magnetic motions can be generated by this torque? Theory predicts that spin transfer may be able to drive a nanomagnet into types of oscillatory magnetic modes not attainable with magnetic fields alone, 1-3 but existing measurement techniques have provided only indirect evidence for dynamical states. 4,6-8,12,14-16 The nature of the possible motions has not been determined. Here we demonstrate a technique that allows direct electrical measurements of microwave-frequency dynamics in individual nanomagnets, propelled by a DC spin-polarised current. We show that in fact spin transfer can produce several different types of magnetic excitations. Although there is no mechanical motion, a simple magnetic-multilayer structure acts like a nanoscale motor; it converts energy from a DC electrical current into high-frequency magnetic rotations that might be applied in new devices including microwave sources and resonators. 2 We examine samples made by sputtering a multilayer of 80 nm Cu / 40 nm Co / 10 nm Cu / 3 nm Co / 2 nm Cu / 30 nm Pt onto an oxidized silicon wafer and then milling through part of the multilayer (Fig. 1a) to form a pillar with an elliptical cross section of lithographic dimensions 130 nm ¥ 70 nm. 17 Top contact is made with a Cu electrode.Transmission or reflection of electrons from the thicker "fixed" Co layer produces a spinpolarised current that can apply a torque to the thinner "free" Co layer. Subsequent oscillations of the free-layer magnetization relative to the fixed layer change the device resistance 18 so, under conditions of DC current bias, magnetic dynamics produce a timevarying voltage (with typical frequencies in the microwave range). If the oscillations were exactly symmetric relative to the direction to the fixed-layer moment, voltage signals would occur only at multiples of twice the fundamental oscillation frequency, f. To produce signal strength at f, we apply static magnetic fields (H) in the sample plane a few degrees away from the magnetically-easy axis of the free layer. All data are taken at room temperature, and by convention positive current I denotes electron flow from the free to the fixed layer.In characterization measurements done at frequencies < 1 kHz, the samples exhibit the same spin-transfer-driven changes in resistance reported in previous experiments 7,9 (Fig. 1b). For H smaller than the coercive field of the free layer (H c ~ 600 Oe), an applied current produces hysteretic switching of the magnetic layers between the low-resistance parallel (P) and high-resistance antiparallel (AP) states. Sweeping H can also drive switching between the P and AP states (Fig 1b, inset). For H larger ...
We present time-resolved measurements of gigahertz-scale magnetic dynamics caused by torque from a spin-polarized current. By working in the time domain, we determined the motion of the magnetic moment throughout the process of spin-transfer-driven switching, and we measured turn-on times of steady-state precessional modes. Time-resolved studies of magnetic relaxation allow for the direct measurement of magnetic damping in a nanomagnet and prove that this damping can be controlled electrically using spin-polarized currents.Spin-polarized electrons traversing a ferromagnet can transfer spin-angular momentum to the local magnetization, thereby applying a torque that may produce magnetic reversal or steady-state precession (1, 2). This spintransfer mechanism allows nanomagnets to be manipulated without magnetic fields, and it is the subject of extensive research for applications in nonvolatile memory, programmable logic, and microwave oscillators (3-11). However, the gigahertz-scale magnetic dynamics that can be driven by spin transfer have previously been measured using only frequency-domain techniques (12-16). Here we report direct time-resolved studies of dynamics excited by spin-transfer torques. By working in the time domain, we are able to characterize the full time-dependent magnetic response to pulses of spin-polarized currents, including transient dynamics. These measurements allow a direct view of the process of spin-transfer-driven magnetic reversal, and they determine the possible operating speeds for practical spin-transfer devices. The results provide rigorous tests of theoretical models for spin transfer (1, 9, 17-19) and strongly support the spin-torque model (1, 18) over competing theories that invoke magnetic heating (9, 20).We studied nanopillar-shaped samples consisting of two 4-nm-thick permalloy (Py K Ni 80 Fe 20 ) ferromagnetic layers separated by an 8-nm-thick Cu spacer layer (Fig. 1A, inset). Both Py layers and the Cu spacer were etched to have an elliptical area of approximately 130 Â 60 nm. Current flows perpendicular to the layers through Cu electrodes. The relative angle between the magnetic moments of the Py layers was detected by changes in the sample resistance due to the giant magnetoresistance effect. For time-resolved measurements on subnanosecond scales, signal-to-noise considerations require averaging over multiple signal traces. If the signal is oscillatory, the phase of the oscillations has to be the same in each trace or else the signal will be lost in averaging (21). This requires that the samples be engineered so that the initial (equilibrium) angle between the magnetic moments of the two layers, q 0 , is different from zero and is well controlled. Our devices were specially designed to provide this control. The equilibrium orientation of our top free-layer Py moment was governed primarily by the shape anisotropy of the elliptical device. We exchange-biased the bottom layer at an angle of 45-to the top layer easy axis using an 8-nm-thick antiferromagnetic Ir 20 Mn 80 underl...
We have studied magnetic switching by spin-polarized currents and also the magnetoresistance in sub-100-nm-diam thin-film Co/Cu/Co nanostructures, with the current flowing perpendicular to the plane of the films. By independently varying the thickness of all three layers and measuring the change of the switching currents, we test the theoretical models for spin-transfer switching. In addition, the changes in the switching current and magnetoresistance as a function of the Cu layer thickness give two independent measurements of the room-temperature spin-diffusion length in Cu.
We report a simulation study on interacting ensembles of Co nanomagnets that can perform basic logic operations and propagate logic signals where the state variable is the magnetization direction. Dipole field coupling between individual nanomagnets drives the logic functionality of the ensemble, and coordinated arrangements of the nanomagnets allow for the logic signal to propagate in a predictable way. Problems with the integrity of the logic signal arising from instabilities in the constituent magnetizations are solved by introducing a biaxial anisotropy term to the Gibbs magnetic free energy of each nanomagnet. The enhanced stability allows for more complex components of a logic architecture capable of random combinatorial logic, including horizontal wires, vertical wires, junctions, fanout nodes, and a novel universal logic gate. Our simulations define the focus of scaling trends in nanomagnet-based logic and provide estimates of the energy dissipation and time per nanomagnet reversal.
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