The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several nonmagnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi2, which exhibits extremely large magnetoresistance, approaching almost 10 7 % at 2 K and 14 T magnetic field. It is found that the electron-hole compensation level in MoSi2 evolves with magnetic field, which is resulted from strong Zeeman effect, and found beneficial in boosting the large non-saturating magnetoresistance. The non-trivial Berry phase in the de Haas-van Alphen oscillations and the moderate suppression of backward scattering of the charge carriers lend support for the topological nature of this semimetal. The ultra-large carrier mobility of the topologically protected charge carriers reinforces the magnetoresistance of MoSi2 to an unprecedented large value.
A nonorthogonal tight-binding model has been developed for the system containing Si and H, where the energy functional included the contributions of both electronic and pairwise interaction between the atoms. In order to calculate the ground state structures of various clusters, energy minimization was carried out using Differential Evolution: a very recently developed biologically inspired computing technique, belonging, in general, to the family of Genetic Algorithms (GAs), but having a number of advantages over its conventional forms.binary equivalent the genetic operations can be performed
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