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Zirconia nanotubular layer with an outer tube diameter  25 nm was synthesized by potentiostatic anodization. The Zr/ZrO2-NT/Au memristive structure is fabricated using stencil mask and magnetron sputtering techniques. Currentvoltage characteristics are measured in full cycles of resistive switching with varying parameters of the applied harmonic voltage. An equivalent circuit with unidirectional electrical conductivity for the studied structure is proposed. Estimates of the electrical resistance of memristors in high-and intermediate resistivity states are performed. The high synaptic plasticity of memristors based on the Zr/ZrO2-NT/Au structure is shown.

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Abstract. For the first time nanostructures of anodized aluminum oxide (AAO) were synthesized using hydrofluoric acid based electrolytes under potentiostatic mode with varied oxidation conditions. As-grown oxide layers were amorphous and had sponge-like disordered structure with ramified pores system of 50 to 300 nm diameters. All samples under daylight demonstrated blue emission with power up to 10 µW that was seen by naked eye. It was shown that integral intensity of photoluminescence (PL) emission band in 350 -650 range increases up to 7 -60 times depending on synthesis details. Observed PL spectra were approximated by superposition of two components with E max = 2.74 and 2.44 eV, FWHM = 0.63 and 0.53 eV. It was substantiated that studied emission have intrinsic origin and can be attributed to F 2 2+ -and F 2 -centers.

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