An efficient photocatalyst capable of forming oxygen defects on the surface of mesoporous TiO 2 was obtained via doping molybdenum ions which can obviously broaden the absorption range of TiO 2 under visible light and reduce the recombination rate of photogenerated electron-hole pairs. The surface oxygen defects (Vo) introduced by metal molybdenum doping will adsorb and activate target molecules on the semiconductor surface. The effect of Vo content, modulated by Mo ions doping, on the photocatalytic NH 3 production rates of the as-obtained samples was investigated. The optimal photocatalytic NH 3 generation rate of Mo-doped TiO 2 could reach 183.02 μmol•g −1 •h −1 under visible light. PL and photoelectrochemical tests results demonstrated that Mo dopants could promote photogenerated carrier's separation and restrain the recombination of carriers. Furthermore, the photocatalysts also exhibited good stability in the recycling experiments for 5 runs. The enhanced photocatalytic activity is owing to the Vo defect states, created by the Mo ion-doped, which benefits to the N 2 adsorption and reduction at the Ti 4+ activation center during the nitrogen fixation process.
g-C3N4 coupled with high specific area TiO2 (HSA-TiO2) composite was prepared by a simple solvothermal method, which was easy to operate with low energy consumption. Degradation of methyl orange test results showed that HSA-TiO2 effectively improved the photocatalytic activity effectively. Photoelectrochemical test results indicated that the separation of photo-generated carriers and the charge carrier migration speed of TiO2 were improved after combination with g-C3N4. g-C3N4/HSA-TiO2 showed strong photocatalytic ability. The degree of degradation of methyl orange by 6%-g-C3N4/HSA-TiO2 could reach up to 92.44%. Furthermore, it revealed good cycle performance. The photocatalytic mechanism of g-C3N4/HSA-TiO2 was proposed.
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