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The performance of diamond power devices depends on the crystalline quality of the drift layer and conduction layer. Because the layers of diamond power device are usually grown by chemical vapor deposition, critical factors determining crystalline quality during this process should be discussed. An important related issue is the reduction of the density of dislocations in the epitaxial layer: the density of dislocations increases during chemical vapor deposition. We show that by using an ultraflat substrate, while existing dislocations in the epitaxial layer remained, no new dislocations were formed.

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