Copper(II) 2,9,16,23-tetra-tert-butyl-29H,31H-phthalocyanine (CuTTBPc) thin films have been obtained using a physical vapor deposition technique. X-ray diffraction analysis confirmed their amorphous nature. The dielectric constant and electrical conductivity were measured over the frequency range from 50 Hz to 8 MHz and temperature range from 293 K to 393 K. The dependence of the dielectric relaxation spectra on frequency at different temperatures was measured and discussed. In addition, the spectral dynamics of both the real and imaginary parts of the complex electric modulus over a wide temperature range is explained. The activation energy of the relaxation process (DE M) was estimated to be 0.26 eV. Moreover, the dependence of the alternating current conductivity on both temperature and frequency was investigated. Additionally, the exponent (s) of the power law of conductivity versus temperature confirmed that the correlated barrier hopping (CBH) model is a successful and appropriate mechanism to explain the charge transportation inside CuTTBPc films. According to this model, the density of localized states N(E F) at room temperature and frequency of 500 kHz was evaluated to be 4.11 9 10 23 eV À1 cm À3. This high density of electron states indicates that CuTTBPc can be recommended as a candidate material for use in solar cells.
The quantum second virial coefficient Bq for 3He is calculated from first principles at low density in the temperature range 0.005–10 K. By “first principles”, it is meant that the many-body phase shifts are first determined within the Galitskii–Migdal–Feynman formalism; they are then plugged into the Beth–Uhlenbeck formula for Bq. A positive Bq corresponds to an overall repulsive interaction; a negative Bq represents an overall attractive interaction. The s-wave scattering length a0 is calculated quite accurately as a function of the temperature T. The effect of the (low-density) medium on Bq is studied. Bq is then used to determine the volume of 3He at the saturation curve. The compressibility is evaluated as a measure of the non-ideality of the system.
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