Resonant cavity enhanced HgCdTe structures have been grown by molecular beam epitaxy, and photoconductors have been modelled and fabricated based on these structures. Responsivity has been measured and shows a peak responsivity of 8 × 10 4 V/W for a 50 × 50 µm 2 photoconductor at a temperature of 200K. The measured responsivity shows good agreement with the modelled responsivity across the midwave infrared window (3-5 µm). The measured responsivity is limited by surface recombination, which limits the effective lifetime to ≈ 15ns. The optical cut-off of the detector varies with temperature as modelled. There is strong agreement between modelled peak responsivity and measured peak responsivity with varying temperature from 80-300K.
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