Fabrication of a fast and high detectivity infrared detector operating at room temperature represents a big challenge. Due to the small energy gap of the semiconducting materials used for infrared detectors, the noise becomes considerable factor and the possibility of operating the detector at room temperature is very limited. A study of the figures of merit antimony thin films detector grown by oblique angle deposition technique is presented. Polycrystalline antimony thin films were thermally evaporated on the glass substrates at a angles of 0, 10, 30, and70°. The aim was to develop a wideband (0.649–10.6) µm self-powered laser detectors; operating at room temperature. The deposition angle had a decisive role in the detector specifications, namely, its detectivity, responsivity, linearity, and response time. At θ = 70° deposition angle; maximum detectivity and fastest response were achieved. The variation of rise time with deposition angle was linear, and the rise time was around 50 ns at 70°. The antimony detectors showed about the same specific detectivity ~ 109 Jones at 300 k for the wavelength range of 1.064–10.6 µm.
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