Absenteeism is a usual pattern of absence from a duty or responsibility. Usually, absenteeism is considered as an indication of person poor performance. In this study a descriptive cross sectional study design was used. A close ended questionnaire was used as a research tool. Convenient sampling technique was used. Data was analyzed on SPSS 20 version. Nurses are absent from their duties because they suffer from minor ailments e.g. headache and backache? In response of this question, 42.5% responded said that they are strongly agreed, 17.5% were agreed, 8.8% were neutral, 21.3% were disagreed, and 10% were strongly agreed. Nurses do absent from their work because workload is too heavy, 42.5% were agreed, 30% were strongly agreed, 12.5% were neutral,7.5% were disagreed and 7.5% were also strongly disagreed. The lack of appropriate recognition and reward could lead to dissatisfaction and absenteeism among nurses, in response of this question nurses asked that they do absent 31.3% agreed, 41.3% strongly agreed, 15.0% are neutral, 12.5%are disagreed and 0% are strongly disagreed. Staff absenteeism is a growing management concern. It can contribute to sickness absence, staffing instability, work overload and job dissatisfaction that could have a negative impact on patient care. The rate of absenteeism can be reduced by productive management, and loyal leadership. It will not only reduce absenteeism rate but also improve quality of care toward the patients. In return of good performance nurses need appraisal.
This paper describes the design and evaluation of a highly selective wideband microstrip bandpass filter with a near brick‐shaped transmission response and a very wide stopband characteristic. The proposed filter structure excites multimode resonances that combine to realize a wideband filter response and excited too are transmission zeros that create a highly selective filter with wideband suppression in the upper and lower stopbands. The filter configuration comprises electromagnetically coupled resonators that are stub loaded. The input and output feedlines are interdigitally coupled to the resonators. Measured results confirm the low‐loss and via‐free wideband filter exhibits an elliptical response with a wide stopband with a rejection greater than 30 dB. The selectivity factor and stopband performance of the proposed filter is better than that obtained with the high‐temperature superconductor (HTS) filters. Design of the filter is relatively simple and easy to manufacture using standard PCB technology. There is good correlation between the simulation and measured results. The proposed wideband bandpass filter is suitable for applications in high interference environments and cognitive radio systems.
This paper describes a low-loss and compact planar ultra-wideband (UWB) quasi-elliptical bandpass filter, which is based on a via-free multimode resonator (MMR) that requires no defected ground plane. The MMR structure essentially consists of a step impedance transmission-line resonator that is loaded centrally with a folded open-circuited stub. The MMR structure is also loaded with two pairs of short high impedance stubs with their ends folded towards the central stub. The proposed MMR structure excites several resonant modes comprising three even and two oddmodes within the filter's passband. The resulting transmission response is highly selective with a low-loss (0.4 dB) passband across 3.60 GHz-11.3 GHz when fabricated on a conventional dielectric substrate, which is otherwise only possible using high temperature superconductors. In addition, the structure generates transmission zeros to yield a filter that exhibits an extremely wide stopband extending up to 35.5 GHz for S21 ≥ 20 dB. The via-free planar filter structure makes its design and construction easy and economical for mass production. The filter's performance was verified through measurements. The planar filter structure can be easily manufactured using standard PCB technology.
The computer analysis of tandem solar cell, c-Si/a-Si:H/[Formula: see text]c-SiGe, is studied within Lumerical FDTD/Device 4.6. The optical characterization is performed in FDTD and then total generation rate is transported into DEVICE for electrical characterization. The electrical characterization of the solar cell is carried out in DEVICE. The design is implemented by staking three sub cells with band gap of 1.12[Formula: see text]eV, 1.50[Formula: see text]eV and 1.70[Formula: see text]eV, respectively. First, single junction solar cell with both a-Si and [Formula: see text]c-SiGe absorbing layers are designed and compared. The thickness for both layers are kept the same. In a single junction, solar cell with a-Si absorbing layer, the fill factor and the efficiency are noticed as [Formula: see text], and [Formula: see text]. For [Formula: see text]c-SiGe absorbing layer, the efficiency and fill factor are increased as [Formula: see text] and [Formula: see text], respectively. Second, for tandem thin film solar cell c-Si/a-Si:H/[Formula: see text]c-SiGe, the fill factor [Formula: see text] and efficiency [Formula: see text] have been noticed. The maximum efficiency for both single junction thin film solar cell c-Si/[Formula: see text]c-SiGe and tandem solar cell c-Si/a-Si:H/[Formula: see text]c-SiGe are improved with check board surface design for light trapping.
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