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Natural dielectrics are emerging nowadays as a niche selection of materials for applications targeting biocompatibility and biodegradability for electronics and sensors within the overall effort of scientific community to achieve sustainable development and to build environmental consciousness. The two natural resins analyzed in this study, silver fir and Rocky mountain fir demonstrate robust dielectric properties and excellent film forming capabilities, while being trap free dielectrics in high‐performance organic field effect transistors (OFETs) operating at voltages as low as 1 V. Immense research possibilities are demonstrated through the avenue of inorganic nanofillers insertions in the natural resins film, that opens the door for fabrication of very low voltage OFETs with high dielectric constant insulating layers.

Despite the great promise of InSe for electronic and optoelectronic applications, Fröhlich interaction plays an important role in electrical transport due to the polar nature of it, which can become more significant in reduced dimensionality. Here, we report on how the dimensionality influences the strength and nature of the Fröhlich polaronic effect in InSe with the aid of plasmonic hot electrons injection. Polar optical phonons couple to hot electrons via the Fröhlich interaction in InSe and enable us to monitor them in conventional Raman measurements. We observed that the intensity of these phonon modes initially increases gradually with decreasing layer number and then drops drastically from 7 L to 6 L (transition from quasi-direct to indirect bandgap at room temperature). Additionally, a gradual decrease of intensity of the polar modes with further decreasing layer number is observed due to the increasing indirect bandgap nature of InSe suggesting reduced Fröhlich coupling below this thickness.

The last decade has seen a flurry of studies related to graphene nanoribbons owing to their potential applications in the quantum realm. However, little experimental work has been reported towards nanoribbons of other 2D materials. Here, we propose a universal approach to synthesize high-quality networks of nanoribbons from arbitrary 2D materials while maintaining high crystallinity, narrow size distribution, and straightforward device integrability. The wide applicability of this technique is demonstrated by fabricating molybednum disulphide, tungsten disulphide, tungsten diselenide, and graphene nanoribbon field effect transistors that inherently do not suffer from interconnection resistance. By relying on self-aligning organic nanostructures as masks, we demonstrate the possibility of controlling the predominant crystallographic direction of the nanoribbon’s edges. Electrical characterization shows record mobilities and very high ON currents despite extreme width scaling. Lastly, we explore decoration of nanoribbon edges with plasmonic particles paving the way for nanoribbon-based opto-electronic devices.

Hybrid analytical-numerical approach to calculate cellular potential encapsulated by semi-circular electrodes to investigate differential effects of normal and cancer cells under electroporation.