The development of organometal halide-based perovskite solar cells (PSCs) has made remarkable progress in photovoltaics. The commercialization of PSCs is still significantly limited, owing to their poor stability and the high material cost of a hole transport layer (HTL) and metal electrodes. To counter these issues, a carbon-based HTL and noble metal-free PSCs are being used. In this work, the effect of Cs-doping on perovskite film morphology and device performance has been systematically studied because the Cs+ and Br− ions-doping has proved to be a good choice to improve the stability of PSCs in combination with a carbon electrode. The results showed that when the Cs-doping concentration in perovskite film, MA1−xCsxPb(I1−yBry)3, was equal to x = 0.09, there was a substantial change in the morphological and optoelectronic properties of perovskite films. The grain size of perovskite films was improved from 70 nm (x = 0.00 control) to 170 nm (x = 0.09 Cs-doped), reducing grain boundaries. Moreover, the trap states were additionally passivated resulting in improved radiative recombinations in the perovskite film. The device fabrication was carried out in a controlled dry glovebox, with relative humidity < 40% using carbon as a counter electrode. As a result, Cs-doped PSCs showed a significant increase in efficiency (5.27%) compared to control PSCs (1.55%).
Wide bandgap (Eg) perovskite solar cells (PSCs) are emerging as the preferred choice for top cells in a tandem architecture with crystalline silicon solar cells. Among the wide bandgap perovskites, a mixed cation mixed halide composition containing CsyFA1-yPbI3−xBrx is a popular choice because the presence of bromine widens the bandgap and addition of cesium stabilizes the crystal structure. These perovskite layers are commonly fabricated using one-step spin coating technique; however, sequential spin coating followed by dip coating has been successful in offering better control over the crystallization process for low bandgap absorber layers. In this paper, the fabrication of a Cs0.2FA0.8PbI3−xBrx perovskite absorber layer using the sequential deposition route is reported. The concentration of bromine was varied in the range 0 ≤ x ≤ 1 and optical, structural, and morphological properties of the films were studied. As the concentration was increased, the perovskite showed better crystallinity and the presence of large grains with high surface roughness, indicating the formation of the CsPbBr3 phase. Optically, the perovskite films exhibited higher absorbance in the ultraviolet (UV) range between 300 and 500 nm, hence up to x = 0.3 they can be profitably employed as a wide bandgap photon absorber layer in solar cell applications.
Tin–lead (Sn–Pb) perovskite solar cells are receiving growing interest due to their applications in tandems and lead mitigation. Nonetheless, fast crystallization and facile Sn2+ oxidation restrict their ambient fabrication, which increases fabrication costs. This Letter presents an experimental study on additive assisted growth of FA0.2MA0.8Sn0.5Pb0.5I2.4Br0.6 narrow bandgap perovskite films employing a Lewis-base molecule, caffeine (1,3,7-trimethylpurine-2,6-dione), having two carbonyl functional groups (C = O) in ambient conditions (relative humidity < ∼10%). The C = O interacts with metallic ions (Sn2+ and Pb2+) via chelation to form an acid–base adduct, slowing down the fast crystallization of FA0.2MA0.8Sn0.5Pb0.5I2.4Br0.6 perovskite films. As a result, the grain size improves resulting in better structural and optical properties. In contrast, Urbach energy values showed higher electronic disorder near the band edges even upon caffeine doping implying Sn4+ doping in an ambient environment. This work accentuates the potential of the acid–base adduction to regulate uncontrolled crystallization of Sn–Pb perovskites in the ambient environment.
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