We present artificial neural network design using spin devices that achieves ultra low voltage operation, low power consumption, high speed, and high integration density. We employ spin torque switched nano-magnets for modelling neuron and domain wall magnets for compact, programmable synapses. The spin based neuron-synapse units operate locally at ultra low supply voltage of 30mV resulting in low computation power. CMOS based inter-neuron communication is employed to realize network-level functionality. We corroborate circuit operation with physics based models developed for the spin devices. Simulation results for character recognition as a benchmark application shows 95% lower power consumption as compared to 45nm CMOS design.

Recent years have witnessed growing interest in the field of brain-inspired computing based on neural-network architectures. In order to translate the related algorithmic models into powerful, yet energy-efficient cognitive-computing hardware, computing-devices beyond CMOS may need to be explored. The suitability of such devices to this field of computing would strongly depend upon how closely their physical characteristics match with the essential computing primitives employed in such models. In this work we discuss the rationale of applying emerging spin-torque devices for bio-inspired computing. Recent spin-torque experiments have shown the path to low-current, low-voltage and high-speed magnetization switching in nano-scale magnetic devices. Such magneto-metallic, current-mode spin-torque switches can mimic the analog summing and 'thresholding' operation of an artificial neuron with high energy-efficiency.Comparison with CMOS-based analog circuit-model of neuron shows that spin neurons can achieve more than two orders of magnitude lower energy and beyond three orders of magnitude reduction in energy-delay product. The application of spin neurons can therefore be an attractive option for neuromorphic computers of future.2

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Recently several device and circuit design techniques have been explored for applying nano-magnets and spin torque devices like spin valves and domain wall magnets in computational hardware. However, most of them have been focused on digital logic, and, their benefits over robust and high performance CMOS remains debatable. Ultra-low voltage, current-mode operation of magneto-metallic spin torque devices can potentially be more suitable for non-Boolean logic like neuromorphic computation, which involve analog processing. Device circuit co-design for different classes of neuromorphic architectures using spin-torque based neuron models along with DWM or other memristive synapses show that the spin-based neuromorphic designs can achieve 15X-100X lower computation energy for applications like, image processing, data-conversion, cognitive-computing, associative memory and programmablelogic, as compared to state of art CMOS designs.

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