<p>This work presents a study of the influence of temperature on the series and shunt resistance of a silicon solar cell under polychromatic illumination. First, a theoretical study allowed us to give the expression of the density of minority carriers. From this expression of the minority carrier density, we determined the expression of the current density and the photovoltage. The expressions of the short circuit current density and the open circuit voltage were also determined. Under polychromatic illumination and temperature, we find that the short circuit current Icc and the open circuit voltage Vco have quasi-linear behaviour. The results obtained show that the series resistance Rs is of the type with a positive temperature coefficient, while the shunt resistance Rsh is of the type with a negative temperature coefficient.</p>
<p>A study of the illumination wavelength effect on the series and shunt resistances of a serial vertical junction silicon solar cell in frequency modulation is done. From the continuity equation of the minority carriers’ density, the expressions of the minority carriers’ density, the photocurrent density, and the photovoltage, are determined. The curves of the I-V characteristic permit us to deduce the series and shunt resistances, which depend on the wavelength and frequency modulation. A few values of series and shunt resistances in short and long wavelengths are determined respectively at the open circuit and the short circuit situation.</p>
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