The synthesis of difluoromethylene-bridged bithiophene and its oligothiophenes are reported. The spectroscopic and electrochemical measurement as well as X-ray analyses unambiguously revealed that the difluoromethylene bridge largely contributes to keeping planarity between the thiophene rings and lowering the LUMO level. The perfluorohexyl-substituted quaterthiophene derivatives showed n-type semiconducting behavior with field-effect electron mobilities up to 0.018 cm2 V-1 s-1.
Field-effect electron mobility and stability of N,N 0 -dioctyl-3,4,9,10-perylene tetracarboxylic diimide (PTCDI-C8H) improved when a holetransporting layer, used in organic light-emitting diodes, was inserted between the gate insulator and the channel layer. This result suggests that insertion of an electronically active interfacial layer of an organic semiconductor is more effective in eliminating electron traps of the insulator surface compared to conventional surface treatment to obtain an inert surface.
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