Researchers and scholars of management and behavioral sciences have tried to determine effective factors, which influence on efficiency and effectiveness in order to increase organization performance and they have tried to identify factors, which create job stress. In this research, we investigate the effect of job stress on job performance through emotional, organizational and moral intelligence. The study is a descriptive-analytic one, which is based on correlation, uses survey method to gather data and they are analyzed using structural equation modeling. The population of this research includes all the personnel of Registry Organization in Arak city. The results suggest that job stress influences on job performance through organizational intelligence and moral intelligence, but job stress does not influence on job performance through emotional intelligence. Regarding research hypotheses, results and findings after analyzing obtained data suggest that job stress influences on emotional, organizational and moral intelligence, but job stress does not influence on job performance. In addition, the results show that organizational and moral intelligence influence on job performance but emotional intelligence does not influence on job performance
The Pb/Si(111) thin films were simulated within the density functional theory (DFT). The wellknown Perdew-Burke-Ernzerhof (PBE) version of the generalized gradient approximation (GGA) and its recent nonempirical successor Wu-Cohen (WC) issue were used to estimate the exchangecorrelation functional. Lattice parameters were calculated for Bulk of the Pb and Si compounds to obtain more reliable lattice mismatch at the interface to be consistent with our used full-potential method of calculations. The WC-GGA result predicts the lattice constants of the Pb and Si compounds better than the GGA when compared with experiment. We have found that the spinorbit coupling (SOC) does not significantly influence the results. Our finding is in agreement with the recent observation of the Rashba-type spin-orbit splitting of quantum well states in ultrathin Pb/Si(111) films. Our result shows, in agreement with experiment, that the top site (T1) is the most stable phase. A combination of tight σ and feeble π bonds has been found at the interface, which results in a covalent Pb-Si bond. Our calculated electric field gradient (EFG) predicts quantum size effects (QSE) with respect to the number of deposited Pb layers on the Si substrate. The QSE prediction shows that the EFG dramatically drops on going from first to second layer. The EFG calculation shows that this system is not an ideal paradigm to freestanding films.
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