Analysis of electromyogram (EMG) signal processing and its application to identify human muscle strength of rehabilitation purpose has been successfully carried out in this paper. Single channel EMG signal was obtained from human muscle using noninvasive electrodes and further process by signal acquisition circuit to get a suitable signal to be process. In the first part of signal acquisition, the amplification circuit for the small EMG signal has been design successfully. After amplification stage EMG signal was digitized through analogue and digital converter (ADC) then further process in microcontroller (ATmega328) for getting accurate EMG signal. Finally, the processed EMG signal was classified into 6 different levels in order to display the muscle strength level of the user. This EMG device can be used to help the weak person or an elderly to identity their strength level of muscle for clinical rehabilitation purpose.
In this paper, an equivalent circuit model is proposed that describes the avalanche and snapback characteristics of Vertical Impact Ionization MOSFET (IMOS). The equivalent circuit model is constructed using MOS transistors that represent the avalanche characteristics. The main goal is to predict the vertical IMOS integrated circuits by using circuit simulations. The vertical IMOS is predicted to have a lower subthreshold slope and high ratio of current. Besides that, the equivalent circuit model is explained which is include the parasitic bipolar transistor with a generated-hole-dependent base resistance. The models for parasitic bipolar is combined with a PSPICE MOS transistor model and it is represented the gate bias dependence of snapback characteristic. The equivalent circuit parameters are extracted from the reference experimental values of previous research and modified to reproduce the measured avalanche and snapback characteristic of the vertical IMOS transistor. The results show that 90% of the analysis subthreshold slope value of circuit simulations similar to the reference experimental value. The ratio of the current also shows almost the same behavior. Therefore, the equivalent circuit model for vertical IMOS can be used in circuit simulations.
The effect of electrospinning parameters on the morphology and efficiency of nonconjugated polar polymers PC 71 BM was systematically investigated by varying the applied voltage, needle tip-to-collector distance and flow rate respectively. The best PVP:PC 71 BM nanofiber efficiency is at applied voltage of 15kV which is about 8.75% followed by 1.0mL/hr flow rate and 10cm needle to collector distance with PCE=7.40% and 6.86% respectively. The device with applied voltage of 15kV exhibits enhanced short circuit current and fill factor by 17.60 mA cm -2 and 69.8% respectively with uniform and consistently aligned fabricated nanofiber. This is due to the extremely organized PVP:PC 71 BM nanofiber molecular structure that offers tightly arranged molecular chain structure and excellent chemical resistance which offers improves electron mobility and long term reliability of the device. This provides better controllability of the organic solar cell (OSC) nanofiber characteristics towards better power conversion efficiency, improved reliability and lifetime encapsulation.
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