In this work, we carried out the study of electrical characteristics with two-dimensional numerical analysis by using the Aided Design (TCAD Silvaco) software for CdS/CuInGaSe2 (CIGS) thin solar cells. Their structure is composed of a thin CIGS solar cell in the configuration: ZnO(200 nm)/CdS(50 nm)/CIGS (350 nm)/Mo. Then ZnO is used for conductive oxide contacted transparent front of the cell. For rear contact, the molybdenum (Mo) is used. The layer of the CdS window and the shape of the CIGS absorber is the n-p semiconductor heterojunction. The performance of the cell was evaluated by applying the defects created in the grain joints of polycrystalline CdS and CIGS material and CIGS/CdS interface in the model, and the physical parameters used in the TCAD simulations have been calibrated to reproduce experimental data. The J–V characteristics are simulated under AM1.5 illumination conditions. The conversion efficiency (η) 20.10% has been reached, and the other characteristic parameters have been simulated: the open-circuit voltage (Voc) is 0.68 V, the circuit-current density (Jsc) is equal to 36.91 mA/cm2, and the form factor (FF) is 0.80. The simulation results showed that the molar fraction x of the CIGS layer has an optimal value around 0.31 corresponding to a gap energy of 1.16 eV, this result is in very good agreement with that found experimentally.
We have investigated the effect of emitter design key parameters such as depth factor and the peak concentration for different types of emitter diffusion profiles (uniform, exponential, Gaussian, and Erfc) on the performance of silicon (Si) solar cells. The value of the depth factor is optimized as 0.1 µm for all these emitter diffusion profiles. Afterward, the peak concentration value is optimized for all the diffusion profiles. A close examination of relative diffusion lengths, conductivities, recombination rates, internal and external quantum efficiencies for these diffusion profiles revealed that among all the considered emitter diffusion profiles, the Erfc profile exhibits the maximum efficiency of 23.53% with an optimized peak concentration of 2×1020 cm-3 for emitter and 1×1019 cm-3 for the back surface filed doping. PC1D was used for all the simulations.
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