The existing investigation explains the consequence of irradiation of red laser on the optic properties of (CoO2) films. The film was equipped by the utilization of semi-computerized spray pyrolysis technique (SCSPT), it is the first time that this technique is used in the preparation and irradiation using a laser in this technique. From the XRD analysis, the crystalline existence with trigonal crystal system was when the received films were processed by continuous red laser (700 nm) with power (>1000mW)for different laser irradiation time using different number of times a laser scan (0, 6, 9, 12, 15 and 18 times) with total irradiation time(0,30,45,60,75,90 min) respectively at room temperature. The optic properties of CoO2 thin samples was struck by light of red laser. The parameters such as the absorbance, coefficient of absorption coefficient of extinction refractive index, optic conductivity, the realϵ_1 and imaginaryϵ_2part of the dielectric constant of the films rises subsequently by laser irradiation, only the transmittance was decremented with laser ray of light. The optic energy gap was reduced from (1.91eV) without irradiation to (1.57eV) and subsequent laser irradiation, and there is a great alteration of optical energy gap values for photovoltaic (PV) utilization. As the results showed that the laser irradiation method has a clear change in the optical properties with less time and energy than the traditional annealing methods, this is the aim of the study.
A fully computerized system of spray pyrolysis was employed for fabricating copper tin sulphite ternary thin film onto glass substrates. During deposition process, the glass substrate was maintained at 310 ± 10 °C. After dissolving the raw chemicals, a mixture of their aqueous solutions was used for spraying process. The optimum solution mixture at the volumetric ratio [S/(Cu+Sn)=1] at 1.5 of pH. XRD investigation was approved a monoclinic phase of CTS. A number of different platform speed was tested in the deposition process. XRD diffraction peaks were described at 2θ = 28.39°, 33.02°, 47.34°, and 56.39° corresponding to the
(
2
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)
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6
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,
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and
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, respectively. These are crystal planes of monoclinic copper tin sulphide. The FTIR study certified a number of the chemical bond of Cu-, Sn- and S-. The grain size was observed in the range of nano using Scherrer formula. Studying surface morphology of CTS films reveals a uniform coating on the substrates which approved by SEM investigations.
Indium Sulfide In 2 S 3 window layer have been prepared by Chemical Spray Pyrolysis (CSP) at substrate temperate Equal (573 K) from Indium chloride and Thiourea were In/S ratio equal 1.2/8 in the spray solution, the samples prepared with different thicknesses (1.6, 1.7, 2.0 µm), the structural, optical and electrical of these films was investigated at different annealing temperature (Ta).X-ray diffraction studied shows the Structural properties of this layer are polycrystalline with preferred orientation 221, and have good improvement in the crystal structure at the annealing temperature (573K for 1h). The grain size increase with increasing annealing temperature and the optical band gap was found in the range (2.4-2.55 eV) as a function of the film thicknesses and the annealing temperature. Electrical studied of the sprayed and annealed sample shows n-type electrical conductivity, the mobility improved at the annealing temperature equal (573 K) but the resistivity decreased with this temperature.
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