to play a crucial role as essential building blocks in future high-tech devices. [1][2][3][4][5][6][7][8] Already in the late 1960s, early studies on the structural and electronic properties of bulk TMDs had started and are detailed in a report by Wilson and Yoffe. [9] TMDs are layered materials which combine a transition metal (M: Mo, W, Ti, Zr, etc.) and a chalcogen (X: S, Se, or Te) in the general formula MX 2 with one layer of M atoms sandwiched between two layers of X atoms. [10] Group VIB TMDs with a 2H structural phase (e.g., MoSe 2 ) are the most explored representatives of such systems. They are characterized by an intrinsic bandgap within the visible and near-infrared regions. [11] Furthermore, the material system exhibits a transition from an indirect to a direct bandgap located at the K or K′ points of the hexagonal Brillouin zone, linked to a decrease in the number of layers from the bulk crystal to a monolayer. [12,13] Moreover, such materials also possess a strong spin-orbit interaction due to the presence of a relatively heavy transition metal along with huge exciton binding energies [14][15][16] resulting from a strong Coulomb interaction and a lack of dielectric screening. These properties lead to a valence-band splitting that strongly affects Alloying semiconductors is often used to tune the material properties desired for device applications. The price for this tunability is the extra disorder caused by alloying. In order to reveal the features of the disorder potential in alloys of atomically thin transition-metal dichalcogenides (TMDs) such as Mo x W 1−x Se 2 , the exciton photoluminescence is measured in a broad temperature range between 10 and 200 K. In contrast to the binary materials MoSe 2 and WSe 2 , the ternary system demonstrates non-monotonous temperature dependences of the luminescence Stokes shift and of the luminescence linewidth. Such behavior is a strong indication of a disorder potential that creates localized states for excitons and affects the exciton dynamics responsible for the observed non-monotonous temperature dependences. A comparison between the experimental data and the results obtained by Monte Carlo computer simulations provides information on the energy scale of the disorder potential and also on the shape of the density of localized states created by disorder. Statistical spatial fluctuations in the distribution of the chemically different material constituents are revealed to cause the disorder potential responsible for the observed effects. A deeper understanding of the disorderinduced effects is vital for prospective TMD alloy-based devices.
A ReS2/WSe2 heterostructure and its polarization resolved PL spectra.
Nitrile butadiene rubber (NBR) samples filled with cobalt–zinc (Co-Zn) ferrite nanoparticles (Co1− xZn xFe2O4, where x = 0, 0.2, 0.4, 0.6, 0.8, 0.9, 0.95 and 1) were prepared. The structure and morphology of Co-Zn ferrite nanoparticles were investigated using X-ray diffraction, transmission electron microscopy, and Fourier transform infrared (FTIR) spectroscopy, while the structure of the Co-Zn nanoferrite-filled NBR composites was studied using scanning electron microscopy and FTIR spectroscopy. The influence of ferrite composition on cure characteristics, mechanical properties and hardness showed an improvement up to x = 0.8. Dielectric parameters showed an enhancement with ferrite composition.
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