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We have measured the microwave resistance of highly conducting perovskite oxide SrMoO3 thin film coplanar waveguides. The epitaxial SrMoO3 thin films were grown by pulsed laser deposition and showed low mosaicity and smooth surfaces with a root mean square roughness below 0.3 nm. Layer-by-layer growth could be achieved for film thicknesses up to 400 nm as monitored by reflection high-energy electron diffraction and confirmed by X-ray diffraction. We obtained a constant microwave resistivity of 29 μΩ·cm between 0.1 and 20 GHz by refining the frequency dependence of the transmission coefficients. Our result shows that SrMoO3 is a viable candidate as a highly conducting electrode material for all-oxide microwave electronic devices.

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composite thick films have been investigated regarding their suitability as low-temperature sintered tunable microwave dielectrics. The investigations showed that already a small amount of ZnO-B 2 O 3 additive can remarkably reduce the sintering temperature down to 900°C. Microstructural investigations of the thick films revealed the formation of an amorphous intergranular phase and a clustering of particles for high additive amounts. The microwave characterization showed a reduction in relative permittivity, dielectric loss, and tunability of the thick films with increasing additive content. These results demonstrate the potential to tailor the material abilities by varying the additive content.