Abstract-The Internet of Things (IoT) poses important challenges requiring multidisciplinary solutions that take into account the potential mutual effects and interactions among the different dimensions of future IoT systems. A suitable platform is required for an accurate and realistic evaluation of such solutions. This paper presents a prototype developed in the context of the EPSRC/eFutures-funded project "Internet of Surprise: SelfOrganising Data". The prototype has been designed to effectively enable the joint evaluation and optimisation of multidisciplinary aspects of IoT systems, including aspects related with hardware design, communications and data processing. This paper provides a comprehensive description, discussing design and implementation details that may be helpful to other researchers and engineers in the development of similar tools. Examples illustrating the potentials and capabilities are presented as well. The developed prototype is a versatile tool that can be used for proof-of-concept, validation and cross-layer optimisation of multidisciplinary solutions for future IoT deployments.
In this paper, the resonant frequency and quality factor of a novel coplanar waveguide (cpw) diamond shaped resonator was analysed using Advanced Design System (ADS-2009) finite element software. The diamond resonator was compared with the cpw radial stub resonator on gallium arsenide (GaAs); the work indicated that the diamond resonator had a smaller physical size and higher quality factor (Q) at milli-metric wave frequencies. Experimentally measured diamond cpw resonators fabricated on gallium arsenide (GaAs) were in good agreement with the simulated results.Index Terms-Diamond resonator, resonant frequency, radial stub resonator and quality factor
An experimental method has been used to estimate the dead space of planar Gunn diodes which were fabricated using GaAs and InP based materials, respectively. The experimental results indicate that the dead space was approximately 0.23 μm and the saturation domain velocity 0.96 × 10 5 m s −1 for an Al 0.23 Ga 0.77 As based device, while for an In 0.53 Ga 0.47 As based device, the dead space was approximately 0.21 μm and the saturation domain velocity 1.93 × 10 5 m s −1 . Further, the results suggest that the saturation domain velocity is reduced or there is an increase in the dead-space due to local field distortions when the active channel length of the planar Gunn diode is less than 1 micron.
The paper describes the planar Gunn diode, which is well suited to providing milli-metric and tera hertz sources using microwave monolithic integrated circuit (MMIC) technologies. Different planar Gunn electrode geometries are described along with DC, RF and thermal characterisation. To realize the planar high frequency sources there is requirement for high frequency planar resonators, the paper will describe both the radial and new diamond shaped geometries.
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